A -type extrinsic semiconductor is obtained when Germanium is doped with [2023]
Antimony
Phosphorous
Arsenic
Boron
(4)
A -type semiconductor is doped with trivalent impurity. This results in formation of an extra hole or electron deficit. From the given options, boron is a trivalent impurity.
The electron concentration in an -type semiconductor is the same as hole concentration in a -type semiconductor. An external field (electric) is applied across each of them. Compare the currents in them. [2021]
No current will flow in -type, current will only flow in -type.
Current in -type = current in -type.
Current in -type > current in -type.
Current in -type > current in -type.
(4)
Mobility of electrons is more as compare to holes and electrons are majority charge carriers in -type semiconductors. So when we apply electric field, current will be more in -type semiconductor compare to -type semiconductor.
For a -type semiconductor, which of the following statements is true? [2019]
Electrons are the majority carriers and pentavalent atoms are the dopants.
Electrons are the majority carriers and trivalent atoms are the dopants.
Holes are the majority carriers and trivalent atoms are the dopants.
Holes are the majority carriers and pentavalent atoms are the dopants.
(3)
In -type semiconductors, holes are the majority carriers and trivalent atoms are the dopants such as B, Al or Ga.
