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Topic Question Set

Q 1 :    

The I–V characteristics shown above are exhibited by a          [2024]

  • light emitting diode

     

  • zener diode

     

  • photodiode

     

  • solar cell

     

(4)

Solar cell exhibit this kind of I-V characteristics.

 

Q 2 :    

Consider the following statements A and B and identify the correct answer.              [2024]

A. For a solar-cell, the I–V characteristics lies in the IV quadrant of the given graph.
B. In a reverse biased pn junction diode, the current measured in (μA), is due to majority charge carriers.

  • A is correct but B is incorrect.

     

  • A is incorrect but B is correct.

     

  • Both A and B are correct.

     

  • Both A and B are incorrect.

     

(1)

(A) The I-V characteristics of solar cell lies in IV quadrant of the given graph, where current is negative which means that current I is supplied by the solar cell and not drawn by it.

(B) In reverse-biased, p-n junction, the positive terminal is connected to the n-type. Hence, majority charge carriers are swept towards the terminals and minority charge carriers are repelled by the terminals. Hence, a small drift current flows through the diode due to minority charge carriers of both n-side and p-side.

Hence, A is correct but B is incorrect.

 

Q 3 :    

Given below are two statements:                                                                [2023]

Statement I: Photovoltaic devices can convert optical radiation into electricity.
Statement II: Zener diode is designed to operate under reverse bias in breakdown region.

In the light of the above statements, choose the most appropriate answer from the options given below:

  • Statement I is correct but Statement II is incorrect.

     

  • Statement I is incorrect but Statement II is correct.

     

  • Both Statement I and Statement II are correct.

     

  • Both Statement I and Statement II are incorrect.

     

(3)

Photovoltaic devices convert optical radiation energy into electricity.

Zener diode operates in reverse biased in breakdown region.

 

Q 4 :    

Consider the following statements (A) and (B) and identify the correct answer.                     [2021]
(A) A zener diode is connected in reverse bias, when used as a voltage regulator.
(B) The potential barrier of p–n junction lies between 0.1 V to 0.3 V.    

  • (A) is incorrect but (B) is correct.

     

  • (A) and (B) both are correct.

     

  • (A) and (B) both are incorrect.

     

  • (A) is correct and (B) is incorrect.

     

(2)

Yes, zener diode is connected in reverse bias as it is used as voltage regulator.

The potential barrier of p-n junction

For Ge; Vo=0.3V ; Si; Vo=0.7V

Q 5 :    

An LED is constructed from a p-n junction diode using GaAsP. The energy gap is 1.9 eV. The wavelength of the light emitted will be equal to       [2019]
 

  • 10.4×10-26 m

     

  • 654 nm 

     

  • 654 Å

     

  • 654×10-11 m

     

(2)

Given, energy gap =1.9 eV

Now, for the LED to operate, electrons need to cross this energy gap.

∴  Wavelength of light emitted, λ=1242 eV-nm1.9 eV=654 nm

Q 6 :    

The given graph represents V–I characteristic for a semiconductor device. Which of the following statement is correct?     [2014]

  • It is V–I characteristic for solar cell where, point A represents open circuit voltage and point B short circuit current.

     

  • It is for a solar cell and points A and B represent open circuit voltage and current, respectively.

     

  • It is for a photodiode and points A and B represent open circuit voltage and current, respectively.

     

  • It is for a LED and points A and B represent open circuit voltage and short circuit current, respectively. 

     

(1)

The V-I characteristic for a solar cell is as shown in the figure.