• 072920 77839
  • info@smartachievers.in
Menu
Back
  • JEE ADVANCE
  • JEE MAIN
  • NEET
  • BITSAT
  • CBSE BOARD
  • UP BOARD
  • CUET
JEE ADVANCE
  • CLASS XI - XII
  • CRASH COURSE
CRASH COURSE
JEE MAIN
  • CLASS XI - XII
  • CRASH COURSE
CRASH COURSE
NEET
  • CLASS XI - XII
  • CRASH COURSE
BITSAT
  • CLASS XI - XII
CBSE BOARD
  • CLASS IX
  • CLASS X
  • CLASS XI
  • CLASS XII
  • CLASS VI
  • CLASS VII
  • CLASS VIII
UP BOARD
  • CLASS IX
  • CLASS X
  • CLASS XI
  • CLASS XII
CUET
  • CRASH COURSE
Courses


Solution


Q.

The barrier potential of a p–n junction depends on
(1) type of semiconductor material
(2) amount of doping
(3) temperature  
Which one of the following is correct                                  [2014]
1 (1) and (2) only   
2 (2) only  
3 (2) and (3) only  
4 (1), (2) and (3)  

Ans.

(4)

The barrier potential depends on type of semiconductor (For Si, Vb = 0.7 V and for Ge, Vb = 0.3 V), amount of doping and also on the temperature.