• 072920 77839
  • info@smartachievers.in
Menu
Back
  • JEE ADVANCE
  • JEE MAIN
  • NEET
  • BITSAT
  • CBSE BOARD
  • UP BOARD
  • CUET
JEE ADVANCE
  • CLASS XI - XII
  • CRASH COURSE
CRASH COURSE
JEE MAIN
  • CLASS XI - XII
  • CRASH COURSE
CRASH COURSE
NEET
  • CLASS XI - XII
  • CRASH COURSE
BITSAT
  • CLASS XI - XII
CBSE BOARD
  • CLASS IX
  • CLASS X
  • CLASS XI
  • CLASS XII
  • CLASS VI
  • CLASS VII
  • CLASS VIII
UP BOARD
  • CLASS IX
  • CLASS X
  • CLASS XI
  • CLASS XII
CUET
  • CRASH COURSE
Courses


Solution


Q.

Consider a n-type semiconductor in which ne and nh are number of electrons and holes, respectively.            [2025]

(A)  Holes are minority carriers

(B)  The dopant is a pentavalent atom

(C)  nenh≠ni2
       (where ni is number of electrons or holes in semiconductor when it is intrinsic form)

(D)  nenh≥ni2

(E)  The holes are not generated due to the donors

Choose the correct answer from the options given below:
1 (A), (C), (D) only  
2 (A), (C), (E) only  
3 (A), (B), (E) only  
4 (A), (B), (C) only  

Ans.

(3)

(A)  n type semiconductor holes are minority carriers and e- are majority carriers.

(B)  Dopant are pentavalent atom.

(C)  ne·nh=ni2 for intrinsic semiconductor.

(E)  In n type semiconductor, primary source of holes generation are thermal excitation.